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| (R) STPS60L30CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS 2 x 30 A 30 V 150 C 0.38 V A2 K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO247, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. TO247 A2 K A1 ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise reverse voltage Tc = 130C = 0.5 Per diode Per device Value 30 50 30 60 600 2 - 65 to + 150 150 10000 Unit V A A A A C C V/s tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/4 June 1999 - Ed: 2A STPS60L30CW THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.8 0.45 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.26x IF(AV) + 0.004 IF2(RMS) IF = 30 A IF = 30 A IF = 60 A IF = 60 A 0.45 0.33 VR = VRRM 250 Min. Typ. Max. 4 500 0.46 0.38 0.55 0.5 Unit mA mA V VF * Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 18 16 14 12 10 8 6 4 2 0 0 5 10 15 IF(av) (A) 20 25 30 =tp/T tp T =0.05 =0.1 =0.2 =0.5 =1 Fig. 2: Average forward current versus ambient temperature (=0.5) (per diode). IF(av)(A) 35 30 25 20 15 10 5 =tp/T T Rth(j-a)=15C/W Rth(j-a)=Rth(j-c) tp Tamb(C) 50 75 100 125 150 35 40 0 0 25 2/4 STPS60L30CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). IM(A) 500 450 400 350 300 250 200 150 100 IM 50 0 1E-3 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 Tc=25C Tc=75C Tc=125C t =0.5 =0.2 T 0.2 =0.1 =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-2 =tp/T tp 0.0 1E-4 1E-3 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). IR(mA) 2E+3 1E+3 Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF) 10 F=1MHz Tj=25C 1E+2 Tj=125C 5 1E+1 1E+0 2 1E-1 1E-2 0 5 10 Tj=25C VR(V) 15 20 25 30 VR(V) 1 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values - per diode). IFM(A) 200 100 Tj=150C (typical values) Tj=25C Tj=125C 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4 STPS60L30CW PACKAGE MECHANICAL DATA TO247 DIMENSIONS V REF. Millimeters Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143 Min. Typ. Max. Min. Typ. Max. V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139 Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1 m.N Ordering type STPS60L30CW Marking STPS60L30CW Package TO247 Weight 4.36g Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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